Datenblatt-Suchmaschine für elektronische Bauteile |
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TLP114A Datenblatt(PDF) 2 Page - Toshiba Semiconductor |
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TLP114A Datenblatt(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TLP114A 2002-9-25 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current (Note 1) IF 20 mA Pulse forward current (Note 2) IFP 40 mA Peak transient forward current (Note 3) IFPT 1 A Reverse voltage VR 5 V Output current IO 8 mA Peak output current IOP 16 mA Supply voltage VCC -0.5~30 V Output voltage VO -0.5~20 V Output power dissipation (Note 4) PO 100 mW Operating temperature range Topr -55~100 °C Storage temperature range Tstg -55~125 °C Lead solder temperature(10 sec.) Tsol 260 °C Isolation Voltage (AC,1 min., R.H.≤ 60°%) (Note 5) BVS 3750 Vrms (Note 1) Derate 0.36mA / °C above 70°C. (Note 2) 50% duty cycle, Ims pulse width. Derate 0.72mA / °C above 70°C. (Note 3) Pulse width≤ 1µs, 300pps. (Note 4) Derate 1.8mW / °C above 70°C. |
Ähnliche Teilenummer - TLP114A |
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Ähnliche Beschreibung - TLP114A |
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