Datenblatt-Suchmaschine für elektronische Bauteile |
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ACE2301 Datenblatt(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2301 Datenblatt(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 5 page ACE2301 Technology P-Channel Enhancement Mode MOSFET VER 1.2 1 Description The ACE2301 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and Battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features • V DS =-20V • R DS(ON) ,Vgs@-4.5V,Ids@-2.8A=100mΩ • R DS(ON) ,Vgs@-2.5V,Ids@-2.0A=150mΩ • Advanced trench process technology • High Density Cell Design For Ultra Low On-Resistance Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -2.2 A Pulsed Drain Current 1) IDM -8 A TA=25℃ 1.25 Maximum Power Dissipation TA=70℃ PD 0.8 W Operating Junction Temperature TJ -55 to 150 OC Storage Temperature Range TSTG -55 to 150 OC Junction to Ambient Thermal Resistance (PCB mounted) 2) RθJA 140 OC/W Note: 1.Repetitive Rating: Pulse width limited by the maximum junction temperature. 2.1-in 2 2oz Cu PCB board. 3.Guaranteed by design; not subject to production testing. |
Ähnliche Teilenummer - ACE2301 |
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Ähnliche Beschreibung - ACE2301 |
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