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ACE2305BM+ Datenblatt(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE2305BM+ Datenblatt(HTML) 3 Page - ACE Technology Co., LTD. |
3 / 8 page ACE2305 Technology P-Channel Enhancement Mode MOSFET VER 1.2 3 Electrical Characteristics (TA=25 , ℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -15 Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA -0.35 -0.85 V Gate Leakage Current IGSS VDS=0.V, VGS=±10V ±100 nA VDS=-12V, VGS=0V -1 Zero Gate Voltage Drain Current IDSS VDS=-12V, VGS=0V TJ=55℃ -10 uA VDS≦-5V, VGS=-4.5V -4 On-State Drain Current ID(ON) VDS≦-5V, VGS=-2.5V -2 A VGS=-4.5V, ID=-3.5A 0.055 0.70 VGS=-2.5V, ID=-3.0A 0.065 0.85 Drain-Source On-Resistance RDS(ON) VGS=-1.8V, ID=-2.0A 0.085 0.105 Ω Forward Transconductance Gfs VDS=-5.0V, ID=-3.5A 8.5 S Diode Forward Voltage VSD IS=-1.5A, VGS=0V -0.8 -1.2 V Dynamic Total Gate Charge Qg 4.8 8 Gate-Source Charge Qgs 1.0 Gate-Drain Charge Qgd VDS=-6V, VGS=-4.5V, ID≣-2.8A 1.0 nC Input Capacitance Ciss 485 Output Capacitance Coss 85 Reverse Transfer Capacitance Crss VDS=-6V, VGS=0V, f=1MHz 40 pF td(on) 10 16 Turn-On Time tr 13 23 td(off) 18 25 Turn-Off Time tf VDD=-6V, RL=6Ω ID≡-1.0A, VGEN=-4.5V RG=6Ω 15 20 ns |
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