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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BTB1424AT3 Datenblatt(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1424AT3 Datenblatt(HTML) 1 Page - Cystech Electonics Corp. |
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1 / 4 page  CYStech Electronics Corp. Spec. No. : C817T3 Issued Date : 2005.10.20 Revised Date : Page No. : 1/4 BTB1424AT3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB1424AT3 Features • Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Complementary to BTD2150AT3 • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V IC(DC) -3 A Collector Current IC(pulse) -7 *1 A Pd(Ta=25℃) 1 Power Dissipation Pd(Tc=25℃) 10 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : *1. Single Pulse Pw≦350µs, Duty≦2% . BTB1424AT3 TO-126 B：Base C：Collector E：Emitter E C B |
Ähnliche Teilenummer - BTB1424AT3 |
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Ähnliche Beschreibung - BTB1424AT3 |
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