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SD103CW Datenblatt(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Teilenummer SD103CW
Bauteilbeschribung  400mW Schottky Barrier Switching Diode
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Hersteller  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

SD103CW Datenblatt(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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SD103AW - SD103CW
400mW Schottky Barrier Switching Diode
Pb
RoHS
COMPLIANCE
RoHS
COMPLIANCE
SOD-123
Features
Low forward voltage drop
Guard ring construction for transient protection
Negligible reverse recovery time
Low reverse capacitance
Mechanical Data
Case: SOD-123, plastic
Polarity: Cathode band
Terminals: Solderable per MIIL-STD-202,
Method 208
Marking: Date Code and Type Code or
Date Code only
Type Code: SD103AW
S4
SD103BW
S5
SD103CW
S6
Weight: 0.01 grams (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
oCambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol SD103AW SD103BW SD103CW Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
30
20
V
RMS Reverse Voltage
VR(RMS)
28
21
14
V
Forward Continuous Current (Note 1)
IFM
350
mA
Non-repetitive Peak Forward Surge Current
@ t ≦ 1.0s
IFSM
1.5
A
Power Dissipation (Note 1)
Pd
400
mW
Thermal Resistance Junction to Ambient Air
(Note 1)
RθJA
300
oC /W
Operating and Storage Temperature Range
TJ, TSTG
-65 to + 125
oC
Electrical Characteristics
Type Number
Symbol
Min
Typ
Max
Units
Reverse Breakdown Voltage (Note 2)
SD103AW
IR=100uA
SD103BW
IR=100uA
SD103CW
IR=100uA
V(BR)
40
30
20
-
V
Peak Reverse Current
SD103AW
VR=30V
SD103BW
VR=20V
SD103CW
VR=10V
IR
-
-
5.0
uA
Forward Voltage Drop
VF
-
0.37
0.60
V
Junction Capacitance
VR=0, f=1.0MHz
Cj
-
50
-
pF
Reverse Recovery Time
IF=IR=200mA
Irr=0.1 x IR, RL=100Ω
trr
-
10
-
nS
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Pulse Test: Pulse width = 300uS, Duty cycle ≦2%..
Version: A07


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