TSC5304DCHC5 datasheet(1/6 Pages) TSC

Teilenummer	TSC5304DCHC5

Bauteilbeschribung	High Voltage NPN Transistor with Diode

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Hersteller	TSC [Taiwan Semiconductor Company, Ltd]

Direct Link	http://www.taiwansemi.com

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TSC5304D

High Voltage NPN Transistor with Diode

1/6

Version: C08

TO-251

(IPAK)

TO-252

(DPAK)

PRODUCT SUMMARY

BVCEO

400V

BVCBO

700V

IC

4A

VCE(SAT)

1.5V @ IC / IB = 4A / 1A

Features

●

Build-in Free-wheeling Diode Makes Efficient Anti-

saturation Operation

●

No Need to Interest an hfe Value Because of Low

Variable Storage-time Spread Even Though Comer

Spirit Product.

●

Low Base Drive Requirement

●

Suitable for Half Bridge Light Ballast Application

Structure

●

Silicon Triple Diffused Type

●

NPN Silicon Transistor

●

Integrated Anti-parallel Collector-Emitter Diode

Ordering Information

Part No.

Package

Packing

TSC5304DCP RO

TO-252

2.5Kpcs / 13” Reel

TSC5304DCH C5

TO-251

75pcs / Tube

Block Diagram

Absolute Maximum Rating (Ta = 25oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

VCBO

700

V

Collector-Emitter Voltage @ VBE=0V

VCES

700

V

Collector-Emitter Voltage

VCEO

400

V

Emitter-Base Voltage

VEBO

9

V

Collector Current

IC

4

A

Collector Peak Current (tp <5ms)

ICM

8

A

Base Current

IB

2

A

Base Peak Current (tp <5ms)

IBM

4

A

Power Total Dissipation @ Tc=25ºC

PDTOT

35

W

Maximum Operating Junction Temperature

TJ

+150

oC

Storage Temperature Range

TSTG

-55 to +150

oC

Pin Definition:

1. Base

2. Collector

3. Emitter

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