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TPC8124 Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer TPC8124
Bauteilbeschribung  Field Effect Transistor Silicon P Channel MOS Type (U-MOS??
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
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TPC8124
2009-11-16
3
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Drain cut-OFF current
IDSS
VDS = −40 V, VGS = 0 V
−10
μA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−40
Drain-source breakdown voltage
V (BR) DSX
ID = −10 mA, VGS = 10 V (Note 6)
−30
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −0.5 mA
−0.8
−2.0
V
VGS = −4.5 V, ID = −6 A
7.7
10
Drain-source ON-resistance
RDS (ON)
VGS = −10 V, ID = −6 A
6.1
8
m
Ω
Input capacitance
Ciss
4750
Reverse transfer capacitance
Crss
540
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
620
pF
Rise time
tr
9
Turn-ON time
ton
17
Fall time
tf
110
Switching time
Turn-OFF time
toff
Duty
≤ 1%, tw = 10 μs
390
ns
Total gate charge
(gate-source plus gate-drain)
Qg
104
Gate-source charge 1
Qgs1
10
Gate-drain (“miller”) charge
Qgd
VDD ≈ −32 V, VGS = −10 V,
ID = −12 A
27
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse
current
Pulse
(Note 1)
IDRP
−48
A
Forward voltage (diode)
VDSF
IDR = −12 A, VGS = 0 V
1.2
V
Note 6: VDSX mode (the application of a plus voltage between gate and source) may cause decrease in maximum
rating of drain-source voltage.
VDD ≈ −20 V
0 V
VGS
−10 V
ID = −6 A
VOUT


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