Datenblatt-Suchmaschine für elektronische Bauteile |
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TPCA8106 Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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TPCA8106 Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCA8106 2010-01-14 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −13 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V VGS = −4 V, ID = −20 A ⎯ 5.5 7.8 Drain-source ON-resistance RDS (ON) VGS = −10 V, ID = −20 A ⎯ 2.9 3.7 m Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −20 A 39.5 79 ⎯ S Input capacitance Ciss ⎯ 4600 ⎯ Reverse transfer capacitance Crss ⎯ 970 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 1500 ⎯ pF Rise time tr ⎯ 10 ⎯ Turn-ON time ton ⎯ 20 ⎯ Fall time tf ⎯ 300 ⎯ Switching time Turn-OFF time toff Duty ≤ 1%, tw = 10 μs ⎯ 750 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 130 ⎯ Gate-source charge 1 Qgs1 ⎯ 12 ⎯ Gate-drain (“miller”) charge Qgd VDD ≈ −24 V, VGS = −10 V, ID = −40 A ⎯ 40 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −120 A Forward voltage (diode) VDSF IDR = −40 A, VGS = 0 V ⎯ ⎯ 1.2 V VDD ≈ −15 V −10 V VGS 0 V ID = −20A VOUT |
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