Datenblatt-Suchmaschine für elektronische Bauteile |
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2N5794U Datenblatt(PDF) 1 Page - Microsemi Corporation |
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2N5794U Datenblatt(HTML) 1 Page - Microsemi Corporation |
1 / 2 page TECHNICAL DATA NPN SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/495 Devices Qualified Level 2N5793 2N5794 2N5794U JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 600 mAdc One Section(1) Total Device(2) Total Power Dissipation @ TA = +25 0C PT 0.5 0.6 W Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 0C 1) Derate linearly 2.86 mW/0C for TA > +25 0C 2) Derate linearly 3.43 mW/0C for TA > +25 0C TO-78* 6 PIN SURFACE MOUNT* *See MILPRF19500/495 for package outline ELECTRICAL CHARACTERISTICS (TA = 25 0C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc V(BR)CEO 40 Vdc Collector-Base Cutoff Current VCB = 75 Vdc VCB = 50 Vdc ICBO 10 10 µAdc ηAdc Emitter-Base Cutoff Current VEB = 6.0 Vdc VEB = 4.0 Vdc IEBO 10 10 µAdc ηAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 42203 Page 1 of 2 |
Ähnliche Teilenummer - 2N5794U |
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Ähnliche Beschreibung - 2N5794U |
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