Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD2696 Datenblatt(PDF) 1 Page - Rohm |
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2SD2696 Datenblatt(HTML) 1 Page - Rohm |
1 / 4 page 1/3 www.rohm.com ○ c 2009 ROHM Co., Ltd. All rights reserved. 2009.05 - Rev.B (1) Base (3) Collector (2) Emitter (1) Base (2) Emitter (3) Collector VMT3 (3) 0.32 0.8 1.2 0.13 0.5 0.22 0.4 0.4 (2) (1) Abbreviated symbol : UH Low frequency transistor (for amplification) 2SD2696 Structure Dimensions (Unit : mm) NPN Silicon Epitaxial Planar Transistor Features 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low. VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA Applications Switching Packaging specifications Inner circuit Package Code Taping Basic ordering unit (pieces) 2SD2696 T2L 8000 Type Absolute maximum ratings (Ta=25 °C) ∗1 ∗2 Parameter V VCBO Symbol V VCEO mA IC mA ICP mW / TOTAL PD °C Tj °C Tstg Limits Unit Collector-base voltage Collector-emitter voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms, Single pulse ∗2 Each terminal mounted on a recommended land. 30 150 −55 to +150 30 V VEBO Emitter-base voltage 6 400 800 150 Electrical characteristics (Ta=25 °C) Parameter Symbol BVCEO IEBO Min. 30 Typ. Max. Unit Conditions BVCBO BVEBO ICBO VCE (sat) hFE fT Cob Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Output capacitance −− VIC=1mA 30 −− VIC=10 µA 6 −− VIE=10 µA −− 100 nA VCB= 30V −− 100 nA VEB= 6V − 120 300 mV IC=100mA, IB= 2mA 270 − 400 680 − VCE=2V, IC=100mA − 3.0 − MHz VCE=2V, IE= −100mA, f=100MHz −− pF VCB=10V, IE= 0A, f=1MHz |
Ähnliche Teilenummer - 2SD2696 |
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Ähnliche Beschreibung - 2SD2696 |
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