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2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.B

(1) Base

(3) Collector

(2) Emitter

(1) Base

(2) Emitter

(3) Collector

VMT3

(3)

0.32

0.8

1.2

0.13

0.5

0.22

0.4 0.4

(2)

(1)

Abbreviated symbol : UH

Low frequency transistor (for amplification)

2SD2696

Structure

Dimensions (Unit : mm)

NPN Silicon Epitaxial Planar Transistor

Features

1) The transistor of 400mA class which went only with 2012

size conventionally is attained in 1208 size.

2) Collector saturation voltage is low.

Applications

Switching

Packaging specifications

Inner circuit

Package

Code

Taping

Basic ordering unit (pieces)

2SD2696

T2L

8000

Type

Absolute maximum ratings (Ta=25

°C)

∗1

∗2

Parameter

V

Symbol

V

mA

mA

mW / TOTAL

°C

Tj

°C

Tstg

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Collector current

Power dissipation

Junction temperature

Range of storage temperature

∗1 Pw=10ms, Single pulse

∗2 Each terminal mounted on a recommended land.

30

150

−55 to +150

30

V

Emitter-base voltage

6

400

800

150

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

30

Typ.

Max.

Unit

Conditions

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

DC current gain

Transition frequency

Output capacitance

−−

30

−−

µA

6

−−

µA

−−

100

nA

−−

100

nA

−

120

300

mV

270

−

400

680

−

−

3.0

−

MHz

−100mA, f=100MHz

−−

pF