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BA33D18HFP Datenblatt(PDF) 6 Page - Rohm

Teilenummer BA33D18HFP
Bauteilbeschribung  Dual-output Secondary Fixed Output LDO Regulators for Local Power Supplies
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Hersteller  ROHM [Rohm]
Direct Link  http://www.rohm.com
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BA33D18HFP Datenblatt(HTML) 6 Page - Rohm

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BA3258HFP, BA33D15HFP, BA33D18HFP
Technical Note
6/8
www.rohm.co
2009.04 - Rev.A
© 2009 ROHM Co., Ltd. All rights reserved.
Thermal Design
If the IC is used under excessive power dissipation conditions, the chip temperature will rise, which will have an adverse
effect on the electrical characteristics of the IC, such as a reduction in current capability. Furthermore, if the temperature
exceeds Tjmax, element deterioration or damage may occur. Implement proper thermal designs to ensure that the power
dissipation is within the permissible range in order to prevent instantaneous IC damage resulting from heat and maintain the
reliability of the IC for long-term operation. Refer to the power derating characteristics curves in Fig. 29.
 Power Consumption (Pc) Calculation Method
 Power consumption of 3.3V power transistor:
Pc1 = (Vcc − 3.3)
 Io1
 Power consumption of Vo2 power transistor:
Pc2 = (Vcc − Vo2)
 Io2
 Power consumption due to circuit current:
Pc3 = Vcc
 Icc
Pc = Pc1 + Pc2 + Pc3
Refer to the above and implement proper thermal designs so that the IC will not be used under excessive power dissipation
conditions under the entire operating temperature range.
 Calculation example (BA33D15HFP)
Example: Vcc = 5V, Io1 = 200mA, and Io2 = 100mA
 Power consumption of 3.3V power transistor:
Pc1 = (Vcc − 3.3)
 Io1 = (5 − 3.3)  0.2 = 0.34W
 Power consumption of 1.5V power transistor:
Pc2 = (Vcc − 1.5)
 Io2 = (5 − 1.5)  0.2 = 0.35W
 Power consumption due to circuit current: Pc3 = Vcc  Icc = 5  0.0085 = 0.0425 (W) (See Figs. 14 and 15)
Implement proper thermal designs taking into consideration the dissipation at full power consumption
(i.e., Pc1 + Pc2 + Pc3 = 0.34 + 0.35 + 0.0425 = 0.7325W).
Explanation of External Components
 BA3258HFP
1)
Pin 1 (Vcc pin)
Connecting a ceramic capacitor with a capacitance of approximately 3.3
F between Vcc and GND as close to the
pins as possible is recommended.
2)
Pins 4 and 5 (Vo pins)
Insert a capacitor between the Vo and GND pins in order to prevent output oscillation. The capacitor may oscillate if
the capacitance changes as a result of temperature fluctuations. Therefore, it is recommended that a ceramic
capacitor with a temperature coefficient of X5R or above and a maximum capacitance change (resulting from
temperature fluctuations) of
10% be used. The capacitance should be between 1F and 1,000 F. (Refer to Fig. 30)
 BA33D□□ Series
1)
Pin 1 (Vcc pin)
Insert a 1
F capacitor between Vcc and GND. The capacitance will vary depending on the application. Check the
capacitance with the application set and implement designing with a sufficient margin.
2)
Pins 4 and 5 (Vo pins)
Insert a capacitor between the Vo and GND pins in order to prevent oscillation. The capacitance may vary greatly with
temperature changes, thus making it impossible to completely prevent oscillation. Therefore, use a tantalum
aluminum electrolytic capacitor with a low ESR (Equivalent Serial Resistance). The output will oscillate if the ESR is
too high or too low, so refer to the ESR characteristcs in Fig. 31 and operate the IC within the stable operating region.
If there is a sudden load change, use a capacitor with higher capacitance. A capacitance between 10
F and
1,000
F is recommended.
Fig. 29 Thermal Derating Curves
Fig. 30 BA3258HFP ESR characteristics
Fig. 31 BA33D□□ Series ESR
AMBIENT TEMPERATURE:Ta[℃]
8
10
9
7
6
5
4
3
2
1
0
25
50
75
100
125
150
Board size: 70 mm
 70  1.6 mm (with a thermal via incorporated by the board)
Board surface area: 10.5 mm
 10.5 mm
(1) 2-layer board (Backside copper foil area: 15 mm
 15mm)
(2) 2-layer board (Backside copper foil area: 70 mm
 70 mm)
(3) 4-layer board (Backside copper foil area: 70 mm
 70mm)
0
Io [mA]
200
400
600
800 1000
0
0.01
0.1
0.5
1.0
2.0
0.02
0.05
0.2
5.0
不安定領域
10.0
安定領域
0.15
4.0
不安定領域
200
400
600
800 1000
0
0.01
0.1
0.5
1.0
2.0
Io [mA]
安定領域
0.02
0.05
0.2
5.0
不安定領域
10.0
(3) 7.3 W
(2) 5.5 W
(1) 2.3 W
*Vcc: Applied voltage
Io1: Load current on Vo1 side
Io2: Load current on Vo2 side
Icc: Circuit current
* The Icc (circuit current) varies with the load.
(See reference data in Figs. 2, 3, 14, and 15.)
Unstable region
Unstable region
Unstable region
Stable region
Stable region
Vo1
Vo2
Controller
3.3 V output
ower
Vcc
GND
Vcc
Vcc
Power Tr
Power Tr
1.5 V output or
1.8 V output
I
P
Icc
IO1
IO2


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