Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD401 Datenblatt(PDF) 1 Page - Wing Shing Computer Components |
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2SD401 Datenblatt(HTML) 1 Page - Wing Shing Computer Components |
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1 / 1 page GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose QUICK REFERENCE DATA LIMITING VALUES SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V CESM Collector-emitter voltage peak value V BE = 0V - 200 V V CEO Collector-emitter voltage (open base) - 150 V I C Collector current (DC) - 2 A I CM Collector current peak value - A P tot Total power dissipation T mb 25 - 20 W V CEsat Collector-emitter saturation voltage I C = 1.5A; IB = 0.15A - 1.5 V V F Diode forward voltage I F = 1.5A 1.5 2.0 V t f Fall time - s SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V CESM Collector-emitter voltage peak value V BE = 0V - 200 V V CEO Collector-emitter voltage (open base) - 150 V V EBO Emitter-base oltage (open colloctor) 5 V I C Collector current (DC) - 2 A I B Base current (DC) - 0.5 A P tot Total power dissipation Tmb 25 - 20 W T stg Storage temperature -55 150 T j Junction temperature - 150 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT I CBO Collector-base cut-off current V CB=200V - 0.2 mA I EBO Emitter-base cut-off current V EB=5V - 0.2 mA V (BR)CEO Collector-emitter breakdown voltage I C=1mA 150 V V CEsat Collector-emitter saturation voltages I C = 1.5A; IB = 0.15A - 1.5 V h FE DC current gain I C = 500mA; VCE = 5V 50 250 f T Transition frequency at f = 5MHz I C = 0.5A; VCE = 12V 5 - MHz C c Collector capacitance at f = 1MHz V CB = 10V 75 pF t on On times us t s Tum-off storage time us t f Fall time us ELECTRICAL CHARACTERISTICS TO-220 Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com 2SD401 SILICON EPITAXAL PLANAR TRANSISTOR |
Ähnliche Teilenummer - 2SD401 |
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Ähnliche Beschreibung - 2SD401 |
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