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SS8061-25GTETR Datenblatt(PDF) 2 Page - Silicon Standard Corp. |
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SS8061-25GTETR Datenblatt(HTML) 2 Page - Silicon Standard Corp. |
2 / 6 page www.SiliconStandard.com 2 of 6 SS8061G 1/21/2005 Rev.2.01 ABSOLUTE MAXIMUM RATINGS OPERATING CONDITIONS (note 1) Input Voltage……………………………………………..7V VEN Voltage…………..…………………………..VIN+0.3V Power Dissipation Internally Limited (Note 2) Maximum Junction Temperature…………………150°C Storage Temperature Range……..-65°C ≤TJ ≤ +150°C Reflow Temperature (soldering, 10sec)……..….260°C Thermal Resistance Junction to Ambient…..…177°C/W Thermal Resistance Junction to Case………..…52°C/W ESD Rating (Human Body Model)…………..………2kV Input Voltage………………………………….2.2V ~5.5V Temperature Range………….………-40°C ≤TA ≤ +85°C ELECTRICAL CHARACTERISTICS VEN=VIN, VIN =5V, IO = 0.5A, CIN = 4.7µF, COUT =10µF, TA = TJ = 25°C unless otherwise specified (Note 3) PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT Supply Voltage VIN 2.2 --- 5.5 V Output Voltage VO VIN=VO +0.7V, IO=10mA -2 VO 2 % Line Regulation VO+0.7V < VIN < 5.5V, IO=10mA --- 0.2 2 % Load Regulation 10mA < IO < 1A --- 0.8 2 % VIN=3.3V,VEN=VIN --- 1.7 2.5 mA Quiescent Current IQ VIN=3.3V,VEN=0V --- 16 35 µA Ripple Rejection fi=120Hz, 1VP-P, IO=100mA --- 55 --- dB Dropout Voltage VD IO=1A --- 0.4 0.6 V Short Circuit Current --- 0.8 --- A Over Temperature --- 150 --- °C VEN Voltage High VENH Output Active 1.6 --- --- V VEN Voltage Low VENL Output Disabled --- --- 0.4 V VEN Bias Current Low IENL VEN=0.4V --- --- 20 µA ADJ Reference Voltage VREF VIN=2.2V, VADJ=VOUT, IO=10mA 1.188 1.2 1.212 V ADJ Pin Threshold --- 0.2 --- V Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions are conditions under which the device functions but the specifications might not be guaranteed. For guaranteed specifications and test conditions see the Electrical Characteristics. Note2: The maximum power dissipation is a function of the maximum junction temperature, TJmax; total thermal resis- tance, θJA, and ambient temperature TA. The maximum allowable power dissipation at any ambient temperature is (Tjmax-TA) / θJA. If this dissipation is exceeded, the die temperature will rise above 150°C and IC will go into thermal shutdown. Note3: Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible. Note4: The type of output capacitor should be tantalum or aluminum. Definitions Dropout Voltage The input/output Voltage differential at which the regula- tor output no longer maintains regulation against further reductions in input voltage. Measured when the output drops 2% below its nominal value, dropout voltage is affected by junction temperature, load current and mini- mum input supply requirements. Line Regulation The change in output voltage for a change in input voltage. The measurement is made under conditions of low dissi- pation or by using pulse techniques such that average chip temperature is not significantly affected. Load Regulation The change in output voltage for a change in load cur- rent at constant chip temperature. The measurement is made under conditions of low dissipation or by using pulse techniques such that average chip temperature is not significantly affected. Maximum Power Dissipation The maximum total device dissipation for which the regulator will operate within specifications. Quiescent Bias Current Current which is used to operate the regulator chip and is not delivered to the load. |
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