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SS8026T55TB Datenblatt(PDF) 2 Page - Silicon Standard Corp.

Teilenummer SS8026T55TB
Bauteilbeschribung  1.8V 1A Positive Voltage Regulator
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Hersteller  SSC [Silicon Standard Corp.]
Direct Link  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SS8026T55TB Datenblatt(HTML) 2 Page - Silicon Standard Corp.

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Rev.2.02 12/06/2003
SS8026
Absolute Maximum Ratings
(Note 1)
Input Voltage………………...................................................................……………………..…..…7V
Power Dissipation Internally Limited…....................................................................
(Note 2)
Maximum Junction Temperature….......................................................……………............…..150°C
Storage Temperature Rang…........................................................................................-65°C
≤ T
J
≤+150°C
Lead Temperature, Time for Wave Soldering
SOT 223 Package……………….…….......................................................................………..260°C, 4s
Continuous Power Dissipation (TA = +25°C)
SOT 89
(1) ……………………......................................................................………………..….…0.5W
SOT 223
(1) ……………...................................................................………...……………….…....0.8W
TO 252
(1)
……………………….................................................................................................................………………………………………………….1.0W
Note
(1): See Recommended Minimum Footprint
Operating Conditions
(Note 1)
Input Voltage……………………........................................................................……………..2.7V~6.5V
Temperature Range…………..........................................................................................…0°C
≤ T
J
≤125°C
Electrical Characteristics
VIN =3.3V, IO = 1A, CIN = 1µF, COUT =10µF, All specifications apply for TA = TJ = 25°C. [Note 3]
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Output Voltage
10mA < IO < 1A
1.764
1.800
1.845
V
Line Regulation
3V < VIN < 6.5V, IO = 10mA
3
30
mV
Load Regulation
10mA < IO < 1A
30
50
mV
Output Impedance
200mA DC and 100mA AC, fo = 120Hz
80
m
Quiescent Current
VIN = 3.3V
480
µA
Ripple Rejection
fi = 120Hz,Vripple =1VP-P, Io = 100mA
53
dB
IO = 0A
880
IO = 100mA
895
IO = 500mA
950
Dropout Voltage
IO = 1A
1160
mV
VIN = 3V(SOT 223)
Minimum footprint
(0.0625 square inch)
660
mA
VIN = 3.3V(SOT 223)
Mounted on 0.53
square inch pcb area
1
A
Output Current
Continuous Test,
TA = 25°C, TJ 150°C,
VOUT within ±2%
VIN = 3.3V(SOT 89)
Mounted on 0.16
square inch pcb area
0.5
A
Short Circuit Current
1.6
A
Over Temperature
150
°C
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Conditions
are conditions under which the device functions but the specifications might not be guaranteed. For guaran-
teed specifications and test conditions see the Electrical Characteristics.
Note 2: The maximum power dissipation is a function of the maximum junction temperature, TJmax , total thermal re-
sistance,
θ
JA, and ambient temperature TA. The maximum allowable power dissipation at any ambient te m-
perature is Tjmax-TA / θJA. If this dissipation is exceeded, tthe die temperature will rise above 150°C and the IC will
go into thermal shutdown. For the SS8026 in SOT 89 package,
θ
JA is 250°C/W. For the SS8026 in SOT 223
package,
θ
JA is 156°C/W; in TO 252 package, θJA is 125°C/W. (See recommend minimum footprint). The safe
operation in SOT 89, SOT 223, TO 252 package, can be seen in “Typical Performance Characteristics” (Safe
Operating Area).
Note3: Low duty pulse techniques are used during test to maintain junction temperatures as close to ambient as
possible.
Note4: The output capacitor should be a tantalum or aluminum type.


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