BCX19R datasheet(1/1 Pages) ZETEX

Teilenummer	BCX19R

Bauteilbeschribung	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

PARTMARKING DETAILS –

BCX19 -

U1

BCX19R -

U4

COMPLEMENTARY TYPES -

BCX17

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Emitter Voltage

VCES

50

V

Collector-Emitter Voltage

VCEO

45

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

1000

mA

Continuous Collector Current

IC

500

mA

Base Current

IB

100

mA

Peak Base Current

IBM

200

mA

Power Dissipation at Tamb=25°C

PTOT

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base Cut-Off

Current

ICBO

100

200

nA

µA

VCB =20V

VCB =20V, Tj=150°C

Emitter-Base Cut-Off

Current

IEBO

10

µA

VEB =5V

Base-Emitter Voltage

VBE

1.2

V

IC =500mA, VCE =1V*

Collector-Emitter

Saturation Voltage

VCE(sat)

620

mV

IC =500mA, IB =50mA*

Static Forward Current

Transfer Ratio

hFE

100

70

40

600

IC =100mA, VCE =1V

IC =300mA, VCE =1V*

IC =500mA, VCE =1V*

Transition Frequency

fT

200

MHz

IC =10mA, VCE =5V

f =35MHz

Output Capacitance

Cobo

5.0

pF

VCB =10V, f =1MHz

*Measured under pulsed conditions.

BCX19

C

B

E

SOT23

TBA

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