Datenblatt-Suchmaschine für elektronische Bauteile |
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1PS70SB82 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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1PS70SB82 Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 2001 Jan 18 3 NXP Semiconductors Product data sheet Schottky barrier (double) diodes 1PS70SB82; 1PS70SB84; 1PS70SB85; 1PS70SB86 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). THERMAL CHARACTERISTICS Note 1. Refer to (SOT323; SC-70) standard mounting conditions. ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. Note 1. Pulsed test: tp = 300 μs; δ = 0.02. SYMBOL PARAMETER MIN. MAX. UNIT Per diode VR continuous reverse voltage − 15 V IF continuous forward current − 30 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 625 K/W SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage see Fig.6 IF = 1 mA − 340 mV IF = 30 mA − 700 mV rD differential diode forward resistance f = 1 MHz; IF = 5 mA; see Fig.9 12 − Ω IR continuous reverse current VR = 1 V; note 1; see Fig.7 − 0.2 μA Cd diode capacitance VR = 0; f = 1 MHz; see Fig.8 1 − pF |
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Ähnliche Beschreibung - 1PS70SB82 |
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