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74AUP1G79GW Datenblatt(PDF) 4 Page - NXP Semiconductors |
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74AUP1G79GW Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 20 page 74AUP1G79_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 3 August 2009 4 of 20 NXP Semiconductors 74AUP1G79 Low-power D-type flip-flop; positive-edge trigger 7. Functional description [1] H = HIGH voltage level; L = LOW voltage level; ↑ = LOW-to-HIGH CP transition; X = don’t care; q = lower case letter indicates the state of referenced input, one setup time prior to the LOW-to-HIGH CP transition. 8. Limiting values [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For TSSOP5 and SC-74A packages: above 87.5 °C the value of P tot derates linearly with 4.0 mW/K. For XSON6 packages: above 118 °C the value of P tot derates linearly with 7.8 mW/K. 9. Recommended operating conditions Table 4. Function table[1] Input Output CP D Q ↑ LL ↑ HH LX q Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +4.6 V IIK input clamping current VI <0V −50 - mA VI input voltage [1] −0.5 +4.6 V IOK output clamping current VO <0V −50 - mA VO output voltage Active mode and Power-down mode [1] −0.5 +4.6 V IO output current VO =0 VtoVCC - ±20 mA ICC supply current - 50 mA IGND ground current −50 - mA Tstg storage temperature −65 +150 °C Ptot total power dissipation Tamb = −40 °C to +125 °C [2] - 250 mW Table 6. Recommended operating conditions Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.8 3.6 V VI input voltage 0 3.6 V VO output voltage Active mode 0 VCC V Power-down mode; VCC = 0 V 0 3.6 V Tamb ambient temperature −40 +125 °C ∆t/∆V input transition rise and fall rate VCC = 0.8 V to 3.6 V 0 200 ns/V |
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