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74AUP1G332GW Datenblatt(PDF) 8 Page - NXP Semiconductors |
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74AUP1G332GW Datenblatt(HTML) 8 Page - NXP Semiconductors |
8 / 16 page 74AUP1G332_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 29 February 2008 8 of 16 NXP Semiconductors 74AUP1G332 Low-power 3-input OR gate 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8. Symbol Parameter Conditions 25 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max (85 °C) Max (125 °C) CL = 5 pF tpd propagation delay A, B and C to Y; see Figure 7 [2] VCC = 0.8 V - 17.6 - - - - ns VCC = 1.1 V to 1.3 V 2.3 5.2 10.2 2.0 10.3 10.3 ns VCC = 1.4 V to 1.6 V 1.7 3.7 6.0 1.9 6.4 6.6 ns VCC = 1.65 V to 1.95 V 1.6 3.0 4.7 1.4 5.2 5.4 ns VCC = 2.3 V to 2.7 V 1.4 2.3 3.3 1.2 3.7 3.9 ns VCC = 3.0 V to 3.6 V 1.2 2.1 2.9 1.1 3.1 3.3 ns CL = 10 pF tpd propagation delay A, B and C to Y; see Figure 7 [2] VCC = 0.8 V - 17.6 - - - - ns VCC = 1.1 V to 1.3 V 2.5 6.1 11.9 2.4 12.0 12.0 ns VCC = 1.4 V to 1.6 V 2.2 4.3 7.1 2.0 7.3 7.6 ns VCC = 1.65 V to 1.95 V 2.1 3.5 5.4 1.9 5.8 6.1 ns VCC = 2.3 V to 2.7 V 1.7 2.9 4.0 1.5 4.5 4.7 ns VCC = 3.0 V to 3.6 V 1.5 2.6 3.7 1.4 3.9 4.1 ns CL = 15 pF tpd propagation delay A, B and C to Y; see Figure 7 [2] VCC = 0.8 V - 23.6 - - - - ns VCC = 1.1 V to 1.3 V 2.9 6.9 13.5 2.7 13.6 13.6 ns VCC = 1.4 V to 1.6 V 2.5 4.9 7.8 2.4 8.5 8.8 ns VCC = 1.65 V to 1.95 V 2.2 4.0 6.2 2.1 6.8 7.1 ns VCC = 2.3 V to 2.7 V 2.0 3.3 4.7 1.6 5.2 5.4 ns VCC = 3.0 V to 3.6 V 1.9 3.1 4.2 1.7 4.5 4.8 ns CL = 30 pF tpd propagation delay A, B and C to Y; see Figure 7 [2] VCC = 0.8 V - 36.3 - - - - ns VCC = 1.1 V to 1.3 V 3.6 9.2 17.9 3.5 18.4 18.7 ns VCC = 1.4 V to 1.6 V 3.2 6.4 10.4 3.3 11.4 11.9 ns VCC = 1.65 V to 1.95 V 3.0 5.3 8.3 2.9 9.1 9.6 ns VCC = 2.3 V to 2.7 V 2.8 4.4 6.2 1.6 6.7 7.1 ns VCC = 3.0 V to 3.6 V 2.6 4.2 5.5 1.4 6.4 6.7 ns |
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