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74AUP2G38GM Datenblatt(PDF) 4 Page - NXP Semiconductors

Teilenummer 74AUP2G38GM
Bauteilbeschribung  Low-power dual 2-input NAND gate; open drain
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

74AUP2G38GM Datenblatt(HTML) 4 Page - NXP Semiconductors

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74AUP2G38_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 8 October 2009
4 of 17
NXP Semiconductors
74AUP2G38
Low-power dual 2-input NAND gate; open drain
7.
Functional description
[1]
H = HIGH voltage level;
L = LOW voltage level;
Z = high-impedance OFF state.
8.
Limiting values
[1]
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For VSSOP8 packages: above 110
°C the value of P
tot derates linearly at 8.0 mW/K.
For XSON8, XSON8U and XQFN8U packages: above 118
°C the value of P
tot derates linearly with 7.8 mW/K.
9.
Recommended operating conditions
Table 4.
Function table[1]
Input
Output
nA
nB
nY
LLZ
LH
Z
HL
Z
HHL
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
+4.6
V
IIK
input clamping current
VI <0V
−50
-
mA
VI
input voltage
[1]
−0.5
+4.6
V
IOK
output clamping current
VO <0V
−50
-
mA
VO
output voltage
Active mode and Power-down mode
[1]
−0.5
+4.6
V
IO
output current
VO =0 VtoVCC
-
+20
mA
ICC
supply current
-
+50
mA
IGND
ground current
−50
-
mA
Tstg
storage temperature
−65
+150
°C
Ptot
total power dissipation
Tamb = −40 °C to +125 °C
[2] -
250
mW
Table 6.
Operating conditions
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.8
3.6
V
VI
input voltage
0
3.6
V
VO
output voltage
Active mode and Power-down mode
0
3.6
V
Tamb
ambient temperature
−40
+125
°C
∆t/∆V
input transition rise and fall rate
VCC = 0.8 V to 3.6 V
0
200
ns/V


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