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74AUP3G04GT Datenblatt(PDF) 4 Page - NXP Semiconductors |
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74AUP3G04GT Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 17 page 74AUP3G04_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 8 October 2009 4 of 17 NXP Semiconductors 74AUP3G04 Low-power triple inverter 7. Functional description [1] H = HIGH voltage level; L = LOW voltage level. 8. Limiting values [1] The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For VSSOP8 packages: above 110 °C the value of P tot derates linearly with 8.0 mW/K. For XSON8, XSON8U and XQFN8U packages: above 118 °C the value of P tot derates linearly with 7.8 mW/K. 9. Recommended operating conditions Table 4. Function table[1] Input Output nA nY LH HL Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +4.6 V IIK input clamping current VI <0V −50 - mA VI input voltage [1] −0.5 +4.6 V IOK output clamping current VO <0V −50 - mA VO output voltage Active mode and Power-down mode [1] −0.5 +4.6 V IO output current VO =0 VtoVCC - ±20 mA ICC supply current - 50 mA IGND ground current −50 - mA Tstg storage temperature −65 +150 °C Ptot total power dissipation Tamb = −40 °C to +125 °C [2] - 250 mW Table 6. Operating conditions Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.8 3.6 V VI input voltage 0 3.6 V VO output voltage Active mode 0 VCC V Power-down mode; VCC = 0 V 0 3.6 V Tamb ambient temperature −40 +125 °C ∆t/∆V input transition rise and fall rate VCC = 0.8 V to 3.6 V - 200 ns/V |
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