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74HCT3G06GD Datenblatt(PDF) 1 Page - NXP Semiconductors |
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74HCT3G06GD Datenblatt(HTML) 1 Page - NXP Semiconductors |
1 / 13 page 1. General description The 74HC3G06 and 74HCT3G06 are high-speed Si-gate CMOS devices. They provide three inverting buffers with open-drain outputs. The outputs of the 74HC3G06 and 74HCT3G06 devices are open drains and can be connected to other open-drain outputs to implement active-LOW wired-OR or active-HIGH wired-AND functions. For digital operation this device must have a pull-up resistor to establish a logic HIGH-level. The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V. The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V. 2. Features I Wide supply voltage range from 2.0 V to 6.0 V I High noise immunity I Low power dissipation I Multiple package options I ESD protection: N HBM JESD22-A114E exceeds 2000 V N MM JESD22-A115-A exceeds 200 V I Specified from −40 °C to +85 °C and −40 °C to +125 °C 3. Ordering information 74HC3G06; 74HCT3G06 Triple inverter with open-drain outputs Rev. 03 — 11 May 2009 Product data sheet Table 1. Ordering information Type number Package Temperature range Name Description Version 74HC3G06DP −40 °C to +125 °C TSSOP8 plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm SOT505-2 74HCT3G06DP 74HC3G06DC −40 °C to +125 °C VSSOP8 plastic very thin shrink small outline package; 8 leads; body width 2.3 mm SOT765-1 74HCT3G06DC 74HC3G06GD −40 °C to +125 °C XSON8U plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 3 × 2 × 0.5 mm SOT996-2 74HCT3G06GD |
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Ähnliche Beschreibung - 74HCT3G06GD |
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