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TPD12S521 Datenblatt(PDF) 6 Page - Texas Instruments |
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TPD12S521 Datenblatt(HTML) 6 Page - Texas Instruments |
6 / 12 page ELECTRICAL CHARACTERISTICS TPD12S521 SLVS639B – OCTOBER 2007 – REVISED APRIL 2009 .................................................................................................................................................... www.ti.com over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ICC5 Operating supply current 5V_SUPPLY = 5 V 110 130 µA ICC3 Bias supply current LV_SUPPLY = 3.3 V 1 5 µA VDROP 5V_OUT overcurrent output drop 5V_SUPPLY = 5 V, IOUT = 55 mA 150 200 mV ISC 5V_OUT short-circuit current limit 5V_SUPPLY= 5 V, 5V_OUT = GND 90 135 175 mA OFF-state leakage current, IOFF LV_SUPPLY = 0 V 0.1 5 µA level-shifting NFET TMDS_D[2:0]+/–, TMDS_CK+/–, CE_REMOTE_OUT, Current conducted from output pins to IBACKDRIVE 5V_SUPPLY < VCH_OUT DDC_DAT_OUT, 0.1 5 µA V_SUPPLY rails when powered down DDC_CLK_OUT, HOTPLUG_DET_OUT, 5V_OUT Voltage drop across level-shifting NFET VON LV_SUPPLY = 2.5 V, VS = GND, IDS = 3 mA 75 95 140 mV when ON Top diode 0.85 IF = 8 mA, VF Diode forward voltage V TA = 25°C (1) Bottom diode 0.85 Pins 4, 7, 10, 13, 20–24, 27, 30, 33(1)(2) IEC ±8 VESD ESD withstand voltage kV Pins 1, 2, 16–19, 37, 38(1)(3) HBM ±2 Positive transients 9 Channel clamp voltage VCL TA = 25°C (1) (3) V at ±8-kV HBM ESD Negative transients –9 Positive transients 3 RDYN Dynamic resistance I = 1 A, TA = 25°C (4) Ω Negative transients 1.5 ILEAK TMDS channel leakage current TA = 25°C (1) 0.01 1 µA CIN, 5V_SUPPLY= 5 V, Measured at 1 MHz, TMDS channel input capacitance 0.8 1.0 pF TMDS VBIAS = 2.5 V (1) ΔCIN, TMDS channel input capacitance 5V_SUPPLY= 5 V, Measured at 1 MHz, 0.05 pF TMDS matching VBIAS = 2.5 V (1) (5) Mutual capacitance between signal pin 5V_SUPPLY= 0 V, Measured at 1 MHz, CMUTUAL 0.07 pF and adjacent signal pin VBIAS = 2.5 V (1) DDC 3.5 4 Level-shifting input capacitance, 5V_SUPPLY= 0 V, Measured at 100 KHz, CIN CEC 3.5 4 pF capacitance to GND VBIAS = 2.5 V (1) HP 3.5 4 (1) This parameter is specified by design and verified by device characterization. (2) Standard IEC 61000-4-2, CDISCHARGE = 150 pF, RDISCHARGE = 330 Ω (3) Human-Body Model (HBM) per MIL-STD-883, Method 3015, CDISCHARGE = 100 pF, RDISCHARGE = 1.5 kΩ (4) These measurements performed with no external capacitor on ESD_BYP. (5) Intrapair matching, each TMDS pair (i.e., D+, D–) 6 Submit Documentation Feedback Copyright © 2007–2009, Texas Instruments Incorporated Product Folder Link(s): TPD12S521 |
Ähnliche Teilenummer - TPD12S521_09 |
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Ähnliche Beschreibung - TPD12S521_09 |
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