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BAP65LX Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BAP65LX
Bauteilbeschribung  Silicon PIN diode
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BAP65LX Datenblatt(HTML) 2 Page - NXP Semiconductors

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BAP65LX_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 11 December 2007
2 of 8
NXP Semiconductors
BAP65LX
Silicon PIN diode
4.
Marking
5.
Limiting values
6.
Thermal characteristics
7.
Characteristics
Table 3.
Marking
Type number
Marking code
BAP65LX
LF
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
-
30
V
IF
forward current
-
100
mA
Ptot
total power dissipation
Tsp = 90 °C
-
135
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-sp)
thermal resistance from junction
to solder point
78
K/W
Table 6.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 50 mA
-
0.9
1.1
V
IR
reverse current
VR =20V
-
-
20
nA
Cd
diode capacitance
see Figure 1; f = 1 MHz;
VR = 0 V
-
0.61
-
pF
VR = 1 V
-
0.48
0.85
pF
VR = 3 V
-
0.43
0.7
pF
VR = 20 V
-
0.37
-
pF
rD
diode forward resistance
see Figure 2; f = 100 MHz;
IF = 1 mA
-
0.94
-
IF = 5 mA
-
0.58
0.95
IF = 10 mA
-
0.49
0.9
IF = 100 mA
-
0.35
-


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