BCP53 datasheet(4/15 Pages) NXP

Teilenummer	BCP53

Bauteilbeschribung	80 V, 1 A PNP medium power transistors

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Hersteller	NXP [NXP Semiconductors]

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BC640_BCP53_BCX53_8

Product data sheet

Rev. 08 — 22 February 2008

4 of 15

NXP Semiconductors

BC640; BCP53; BCX53

80 V, 1 A PNP medium power transistors

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3]

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

−100

V

VCEO

collector-emitter voltage

open base

-

−80

V

VEBO

emitter-base voltage

open collector

-

−5V

IC

collector current

-

−1A

ICM

peak collector current

single pulse;

tp ≤ 1ms

-

−1.5

A

IBM

peak base current

single pulse;

tp ≤ 1ms

-

−0.2

A

Ptot

total power dissipation

Tamb ≤ 25 °C

BC640

[1] -

0.83

W

BCP53

[1] -

0.65

W

[2] -1

W

BCX53

[1] -

0.5

W

[2] -

0.9

W

[3] -

1.3

W

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Tstg

storage temperature

−65

+150

°C

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