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BCX70H Datenblatt(Datasheet) 4 Page - NXP Semiconductors

Teile-Nr. BCX70H
Beschreibung  NPN general purpose transistors
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Hersteller  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
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 4 page
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2004 Jan 16
4
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BCX70 series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1.
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 45 V
20
nA
IE = 0; VCB = 45 V; Tamb = 150 °C
20
μA
IEBO
emitter cut-off current
IC = 0; VEB = 4 V
20
nA
hFE
DC current gain
IC = 10 μA; VCE = 5 V
BCX70G
BCX70H
40
BCX70J
30
BCX70K
100
DC current gain
IC = 2 mA; VCE = 5 V
BCX70G
120
220
BCX70H
180
310
BCX70J
250
460
BCX70K
380
630
DC current gain
IC = 50 mA; VCE = 1 V
BCX70G
50
BCX70H
70
BCX70J
90
BCX70K
100
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.25 mA
50
350
mV
IC = 50 mA; IB = 1.25 mA
100
550
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.25 mA
600
850
mV
IC = 50 mA; IB = 1.25 mA
700
1050
mV
VBE
base-emitter voltage
IC = 10 μA; VCE = 5 V
520
mV
IC = 2 mA; VCE = 5 V
550
650
750
mV
IC = 50 mA; VCE = 1 V
780
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
1.7
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
11
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz;
note 1
100
250
MHz
F
noise figure
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
2
6
dB




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