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BF823 Datenblatt(PDF) 3 Page - NXP Semiconductors

Teilenummer BF823
Bauteilbeschribung  PNP high-voltage transistors
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BF823 Datenblatt(HTML) 3 Page - NXP Semiconductors

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2004 Jan 16
3
NXP Semiconductors
Product data sheet
PNP high-voltage transistors
BF821; BF823
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BF821
−300
V
BF823
−250
V
VCEO
collector-emitter voltage
open base
BF821
−300
V
BF823
−250
V
VEBO
emitter-base voltage
open collector
−5
V
IC
collector current (DC)
−50
mA
ICM
peak collector current
−100
mA
IBM
peak base current
−50
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0; VCB = −200 V
−10
nA
IE = 0; VCB = −200 V; Tj = 150 °C
−10
µA
IEBO
emitter-base cut-off current
IC = 0; VEB = −5 V
−50
nA
hFE
DC current gain
IC = −25 mA; VCE = −20 V
50
VCEsat
collector-emitter saturation voltage
IC = −30 mA; IB = −5 mA
−800
mV
Cre
feedback capacitance
IC = Ic = 0; VCB = −30 V; f = 1 MHz −
1.6
pF
fT
transition frequency
IC = −10 mA; VCE = −10 V;
f = 100 MHz
60
MHz


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