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BF840 Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BF840
Bauteilbeschribung  NPN medium frequency transistor
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BF840 Datenblatt(HTML) 2 Page - NXP Semiconductors

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2004 Jan 13
2
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BF840
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• AM mixers
• IF amplifiers in AM/FM receivers.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
Note
1.
* = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER
MARKING CODE(1)
BF840
NC*
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BF840
plastic surface mounted package; 3 leads
SOT23
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
4
V
IC
collector current (DC)
25
mA
ICM
peak collector current
25
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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