STPSC806D datasheet(3/7 Pages) STMICROELECTRONICS

Teilenummer	STPSC806D

Bauteilbeschribung	600 V power Schottky silicon carbide diode

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Hersteller	STMICROELECTRONICS [STMicroelectronics]

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STPSC806

Characteristics

Doc ID 16286 Rev 1

3/7

Figure 1.

Forward voltage drop versus

forward current (typical values)

Figure 2.

Reverse leakage current versus

reverse voltage applied

(maximum values)

0

2

4

6

8

10

12

14

16

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I

FM(A)

T

j=150 °C

T

j=150 °C

T

j=175 °C

T

j=175 °C

T

j=25 °C

T

j=25 °C

VFM(V)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

0

50

100

150

200

250

300

350

400

450

500

550

600

I

R(µA)

T

j=25 °C

T

j=25 °C

T

j=150 °C

T

j=150 °C

T

j=175 °C

T

j=175 °C

VR(V)

Figure 3.

Peak forward current versus case

temperature

Figure 4.

Junction capacitance versus

reverse voltage applied

(typical values)

0

10

20

30

40

50

60

70

0

25

50

75

100

125

150

175

I

M(A)

T

δ=tp/T

tp

δ=0.1

δ=0.3

δ=0.5

δ=0.7

δ=1

TC(°C)

0

50

100

150

200

250

300

350

1

10

100

1000

C(pF)

F=1 MHz

V

OSC=30 mVRMS

T

j=25 °C

VR(V)

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