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PZTA92 Datenblatt(PDF) 3 Page - NXP Semiconductors

Teilenummer PZTA92
Bauteilbeschribung  PNP high-voltage transistor
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1999 Apr 14
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
PZTA92
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1.
Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
104
K/W
Rth j-s
thermal resistance from junction to soldering point
23
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = −200 V
−20
nA
IEBO
emitter cut-off current
IC = 0; VBE = −5 V
−100
nA
hFE
DC current gain
IC = −1 mA; VCE = −10 V; note 1
25
IC = −10 mA; VCE = −10 V; note 1
40
IC = −30 mA; VCE = −10 V; note 1
25
VCEsat
collector-emitter saturation
voltage
IC = −20 mA; IB = −2 mA
−500
mV
VBEsat
base-emitter saturation voltage
IC = −20 mA; IB = −2 mA
−900
mV
Cc
collector capacitance
IE = 0; VCB = −20 V; f = 1 MHz
6
pF
fT
transition frequency
IC = −10 mA; VCE = −20 V; f = 100 MHz
50
MHz


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