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TEA152X Datenblatt(PDF) 10 Page - NXP Semiconductors |
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TEA152X Datenblatt(HTML) 10 Page - NXP Semiconductors |
10 / 17 page TEA152X_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 23 March 2009 10 of 17 NXP Semiconductors TEA152x SMPS ICs for low-power systems 10. Thermal characteristics [1] Thermal resistance Rth(j-a) can be lower when the GND pins are connected to sufficient copper area on the printed-circuit board. See the TEA152x application notes for details. 11. Characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] DIP8 package 100 K/W SO14 package 91 K/W Table 6. Characteristics Tamb =25 °C; no over temperature; all voltages are measured with respect to ground; currents are positive when flowing into the IC; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supply ICC(oper) operating supply current normal operation - 1.3 1.9 mA ICC(startup) start-up supply current start-up - 180 400 µA ICC(ch) charge supply current Vdrain >60V −6 −4 −3mA VCC(start) start voltage 9 9.5 10 V VCC(stop) stop supply voltage undervoltage lockout 7.0 7.5 8.0 V Idrain current on pin DRAIN Vdrain >60V no auxiliary supply - 1.5 2 mA with auxiliary supply - 30 125 µA Pulse width modulator δmin minimum duty factor - 0 - % δmax maximum duty cycle f = 100 kHz - 75 - % SOPS Vdet(demag) demagnetization detection voltage 50 100 150 mV tsup(xfmr_ring) transformer ringing suppression time start of 2nd stroke 1.0 1.5 2.0 µs RC oscillator VRC(min) minimum voltage on pin RC 60 75 90 mV VRC(max) maximum voltage on pin RC 2.4 2.5 2.6 V tch(RC) charge time on pin RC - 1 - µs fosc oscillator frequency 10 100 200 kHz Duty factor regulator: pin REG VREG voltage on pin REG 2.4 2.5 2.6 V Gv voltage gain error amplifier - 20 - dB Vclamp(REG) clamp voltage on pin REG IREG = 6 mA - - 7.5 V |
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