Datenblatt-Suchmaschine für elektronische Bauteile |
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2SJ412 Datenblatt(PDF) 5 Page - Toshiba Semiconductor |
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2SJ412 Datenblatt(HTML) 5 Page - Toshiba Semiconductor |
5 / 6 page 2SJ412 2009-09-29 5 TEST CIRCUIT WAVE FORM IAR BVDSS VDD VDS RG = 25 Ω VDD = −25 V, L = 1.84 mH ⎟⎟ ⎠ ⎞ ⎜⎜ ⎝ ⎛ − = V B B · ·L·I 2 1 Ε DD VDSS VDSS 2 AS −15 V 15 V Channel temperature Tch (°C) EAS – Tch 0 25 200 500 150 75 100 300 400 50 100 125 Drain-source voltage VDS (V) Safe Operating Area −0.1 −1 −3 −10 −30 −100 −300 −0.3 −0.5 −1 −3 −5 −10 −30 −50 −100 −300 −0.3 IC max (pulsed)* *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. ID max (continuous) VDSS max 1 ms* 10 ms* 100 μs* DC operation Tc = 25°C rth – tw Pulse width tw (s) 100 m 10 m 0.01 1 1 10 0.3 3 0.03 0.5 0.05 0.1 10 μ 100 μ 1 m T PDM t Duty = t/T Rth (ch-c) = 2.08°C/W Duty = 0.5 0.02 0.2 0.1 0.05 Single pulse 0.01 |
Ähnliche Teilenummer - 2SJ412_09 |
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Ähnliche Beschreibung - 2SJ412_09 |
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