2SJ464_09 datasheet(1/6 Pages) TOSHIBA

Teilenummer	2SJ464

Bauteilbeschribung	Chopper Regulator, DC-DC Converter and Motor Drive Applications

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2SJ464

2009-09-29

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)

2SJ464

Chopper Regulator, DC-DC Converter and Motor Drive

Applications

• 4-V gate drive

• Low drain-source ON resistance: RDS (ON) = 64 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 15 S (typ.)

• Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)

• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

−100

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

−100

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

−18

Drain current

Pulse (Note 1)

IDP

−72

A

Drain power dissipation (Tc

= 25°C)

PD

45

W

Single pulse avalanche energy

(Note 2)

EAS

937

mJ

Avalanche current

IAR

−18

A

Repetitive avalanche energy (Note 3)

EAR

4.5

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Rth (ch-c)

2.78

°C/W

Thermal resistance, channel to ambient

Rth (ch-a)

62.5

°C/W

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: VDD = −50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 Ω, IAR = −18 A

Note 3: Repetitive rating: pulse width limited by maximum junction temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1B

Weight: 1.9 g (typ.)

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