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2SJ567 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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2SJ567 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SJ567 2009-07-13 1 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) 2SJ567 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) • Enhancement model: Vth = −1.5 to −3.5 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS −200 V Drain-gate voltage (RGS = 20 kΩ) VDGR −200 V Gate-source voltage VGSS ±20 V DC (Note 1) ID −2.5 Drain current Pulse (Note 1) IDP −10 A Drain power dissipation (Tc = 25°C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 97.5 mJ Avalanche current IAR −2.5 A Repetitive avalanche energy (Note 3) EAR 2.0 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 6.25 °C/W Thermal resistance, channel to ambient Rth (ch-a) 125 °C/W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = −25.2 mH, IAR = −2.5 A RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm 0.6 MAX. 0.6 MAX. 2.3 6.8 MAX. 0.95 MAX. 0.6 ± 0.15 5.2 ± 0.2 1 2 3 2.3 3 2 1 1. GATE 2. DRAIN ( HEAT SINK) 3. SOURSE JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) 1.1 ± 0.2 1.05 MAX. 2.3 ± 0.15 5.2 ± 0.2 0.8 MAX. 0.6 MAX. 6.5 ± 0.2 1 2 3 0.6 MAX. 0.6 ± 0.15 2.3 ± 0.15 1. GATE 2. DRAIN ( HEAT SINK) 3. SOURSE 3 2 1 JEDEC ― JEITA ― TOSHIBA 2-7J1B Weight: 0.36 g (typ.) |
Ähnliche Teilenummer - 2SJ567_09 |
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Ähnliche Beschreibung - 2SJ567_09 |
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