Datenblatt-Suchmaschine für elektronische Bauteile |
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TPC8111 Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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TPC8111 Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPC8111 2006-11-16 3 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA Drain cut-OFF current IDSS VDS = −30 V, VGS = 0 V ⎯ ⎯ −10 µA V (BR) DSS ID = −10 mA, VGS = 0 V −30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = −10 mA, VGS = 20 V −15 ⎯ ⎯ V Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V VGS = −4 V, ID = −5.5 A ⎯ 12 18 Drain-source ON resistance RDS (ON) VGS = −10 V, ID = −5.5 A ⎯ 8.1 12 m Ω Forward transfer admittance |Yfs| VDS = −10 V, ID = −5.5 A 11 23 ⎯ S Input capacitance Ciss ⎯ 5710 ⎯ Reverse transfer capacitance Crss ⎯ 560 ⎯ Output capacitance Coss VDS = −10 V, VGS = 0 V, f = 1 MHz ⎯ 590 ⎯ pF Rise time tr ⎯ 18 ⎯ Turn-ON time ton ⎯ 23 ⎯ Fall time tf ⎯ 109 ⎯ Switching time Turn-OFF time toff Duty <= 1%, tw = 10 µs ⎯ 396 ⎯ ns Total gate charge (gate-source plus gate-drain) Qg ⎯ 107 ⎯ Gate-source charge 1 Qgs1 ⎯ 12 ⎯ Gate-drain (“miller”) charge Qgd VDD ∼− −24 V, VGS = −10 V, ID = −11 A ⎯ 20 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ −44 A Forward voltage (diode) VDSF IDR = −11 A, VGS = 0 V ⎯ ⎯ 1.2 V VDD ∼− −15 V 0 V VGS −10 V ID = −5.5 A VOUT |
Ähnliche Teilenummer - TPC8111_06 |
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Ähnliche Beschreibung - TPC8111_06 |
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