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TPC8111 Datenblatt(PDF) 3 Page - Toshiba Semiconductor

Teilenummer TPC8111
Bauteilbeschribung  Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC8111 Datenblatt(HTML) 3 Page - Toshiba Semiconductor

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TPC8111
2006-11-16
3
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
µA
Drain cut-OFF current
IDSS
VDS = −30 V, VGS = 0 V
−10
µA
V (BR) DSS
ID = −10 mA, VGS = 0 V
−30
Drain-source breakdown voltage
V (BR) DSX
ID = −10 mA, VGS = 20 V
−15
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−0.8
−2.0
V
VGS = −4 V, ID = −5.5 A
12
18
Drain-source ON resistance
RDS (ON)
VGS = −10 V, ID = −5.5 A
8.1
12
m
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −5.5 A
11
23
S
Input capacitance
Ciss
5710
Reverse transfer capacitance
Crss
560
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
590
pF
Rise time
tr
18
Turn-ON time
ton
23
Fall time
tf
109
Switching time
Turn-OFF time
toff
Duty <= 1%, tw = 10 µs
396
ns
Total gate charge
(gate-source plus gate-drain)
Qg
107
Gate-source charge 1
Qgs1
12
Gate-drain (“miller”) charge
Qgd
VDD ∼− −24 V, VGS = −10 V,
ID = −11 A
20
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Pulse
(Note 1)
IDRP
−44
A
Forward voltage (diode)
VDSF
IDR = −11 A, VGS = 0 V
1.2
V
VDD ∼− −15 V
0 V
VGS
−10 V
ID = −5.5 A
VOUT


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