TPC6105 datasheet(2/7 Pages) TOSHIBA

Teilenummer	TPC6105

Bauteilbeschribung	Silicon P Channel MOS Type (U-MOS III)

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 7 page

TPC6105

2006-11-17

2

Electrical Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±8 V, VDS = 0 V

⎯

±10

µA

Drain cut-off current

IDSS

VDS = −20 V, VGS = 0 V

⎯

−10

µA

V (BR) DSS

ID = −10 mA, VGS = 0 V

−20

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = −10 mA, VGS = 8 V

−12

⎯

V

Gate threshold voltage

Vth

VDS = −10 V, ID = −200 µA

−0.5

⎯

−1.2

V

RDS (ON)

VGS = −1.8 V, ID = −0.7 A

⎯

215

300

RDS (ON)

VGS = −2.5 V, ID = −1.4 A

⎯

110

160

Drain-source ON resistance

RDS (ON)

VGS = −4.5 V, ID = −1.4 A

⎯

72

110

m

Ω

Forward transfer admittance

|Yfs|

VDS = −10 V, ID = −1.4 A

2.4

4.7

⎯

S

Input capacitance

Ciss

⎯

470

⎯

Reverse transfer capacitance

Crss

⎯

70

⎯

Output capacitance

Coss

VDS = −10 V, VGS = 0 V, f = 1 MHz

⎯

80

⎯

pF

Rise time

tr

⎯

5

⎯

Turn-on time

ton

⎯

9

⎯

Fall time

tf

⎯

8

⎯

Switching time

Turn-off time

toff

Duty <= 1%, tw = 10 µs

⎯

26

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

6

⎯

Gate-source charge

Qgs

⎯

4

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− −16 V, VGS = −5 V,

ID = −2.7 A

⎯

2

⎯

nC

Source-Drain Ratings and Characteristics (Ta

= 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse

current

Pulse (Note 1)

IDRP

—

−10.8

A

Forward voltage (diode)

VDSF

IDR = −2.7 A, VGS = 0 V

—

1.2

V

VDD ∼− −10 V

−5 V

VGS

0 V

ID = −1.4 A

VOUT

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