Datenblatt-Suchmaschine für elektronische Bauteile |
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TPCA8011-H Datenblatt(PDF) 4 Page - Toshiba Semiconductor |
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TPCA8011-H Datenblatt(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCA8011-H 2006-11-16 4 50 30 20 0 40 10 0 0.2 0.4 0.6 0.8 VGS = 1.7 V 3 8 3.5 4.5 10 1.0 4 6 5 1 0.1 1 10 10 100 VGS = 2.5 V 100 4.5 0.1 100 1000 0.1 1 100 25 100 Ta = −55°C 10 10 1 10 0 0.24 0.32 0.40 0 ID = 40 A 2 4 6 8 10 20 0.16 0.08 0 0 1 2 4 40 100 Ta = −55°C 25 100 60 80 20 3 Drain current ID (A) RDS (ON) – ID Common source Ta = 25°C Pulse test Drain-source voltage VDS (V) ID – VDS Drain-source voltage VDS (V) ID – VDS Gate-source voltage VGS (V) ID – VGS Common source VDS = 10 V Pulse test Gate-source voltage VGS (V) VDS – VGS Common source Ta = 25℃ Pulse test Drain current ID (A) ⎪Yfs⎪ – ID Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test 5 80 60 40 20 0 100 0 2 4 3 1 Common source Ta = 25°C Pulse test 1.9 2 2.1 2.2 2.3 2.5 VGS = 1.7 V 1.9 2 2.1 2.2 2.3 2.4 2.5 2.6 3 10 6 5 4.5 4 3.5 |
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