Datenblatt-Suchmaschine für elektronische Bauteile |
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TPC8009-H Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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TPC8009-H Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPC8009-H 2006-11-16 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ Drain-source breakdown voltage V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V VGS = 4.5 V, ID = 6.5 A ⎯ 11 15 Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 6.5 A ⎯ 8 10 m Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 6.5 A 8 16 ⎯ S Input capacitance Ciss ⎯ 1460 ⎯ Reverse transfer capacitance Crss ⎯ 250 ⎯ Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz ⎯ 600 ⎯ pF Rise time tr ⎯ 5 ⎯ Turn-on time ton ⎯ 13 ⎯ Fall time tf ⎯ 12 ⎯ Switching time Turn-off time toff Duty <= 1%, tw = 10 μs ⎯ 37 ⎯ ns VDD ∼− 24 V, VGS = 10 V, ID = 13 A ⎯ 29 ⎯ Total gate charge (gate-source plus gate-drain) Qg VDD ∼− 24 V, VGS = 5 V, ID = 13 A ⎯ 16 ⎯ Gate-source charge 1 Qgs1 ⎯ 4.2 ⎯ Gate-drain (“Miller”) charge Qgd ⎯ 7.3 ⎯ Gate switch charge QSW VDD ∼− 24 V, VGS = 10 V, ID = 13 A ⎯ 9.1 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 52 A Forward voltage (diode) VDSF IDR = 13 A, VGS = 0 V ⎯ ⎯ −1.2 V VDD ∼− 15 V 0 V VGS 10 V ID = 6.5 A VOUT |
Ähnliche Teilenummer - TPC8009-H_06 |
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Ähnliche Beschreibung - TPC8009-H_06 |
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