Datenblatt-Suchmaschine für elektronische Bauteile |
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TPCP8103-H Datenblatt(PDF) 6 Page - Toshiba Semiconductor |
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TPCP8103-H Datenblatt(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page TPCP8103-H 2009-12-10 6 t =1 ms※ 10 ms※ VDSS MAX. −100 −1 −10 −0.1 −0.1 −1 −10 −100 0.001 0.01 0.1 1 10 100 1000 1000 10 100 1 0.1 ① ② Safe Operating Area rth – tw Pulse width tw (s) Single-pulse ID max (Pulse)※ ※ : Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Drain-source voltage VDS (V) ① Device mounted on a glass-epoxy board (a) (Note 2a) ② Device mounted on a glass-epoxy board (b) (Note 2b) |
Ähnliche Teilenummer - TPCP8103-H |
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Ähnliche Beschreibung - TPCP8103-H |
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