Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2712GT1G Datenblatt(PDF) 1 Page - ON Semiconductor |
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2SC2712GT1G Datenblatt(HTML) 1 Page - ON Semiconductor |
1 / 3 page © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 Publication Order Number: 2SC2712GT1/D 1 2SC2712GT1G Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904* in some key parametric specifications. Features • Lower VCE(sat)* • Higher Gain (hfe)* • Higher Breakdown Voltage Rating* • Moisture Sensitivity Level: 1 • This is a Pb−Free Device Benefits • Longer Battery Life • Improved Performance Through Targeted Design MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage V(BR)EBO 5.0 Vdc Collector Current − Continuous IC 150 mAdc Collector Current − Peak IC(P) 200 mAdc Base Current IB 30 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Specifications compared to MMBT3904. SC−59 CASE 318D STYLE 1 MARKING DIAGRAMS 1 2 3 SCG M SCG = Specific Date Code M = Date Code COLLECTOR 3 2 BASE 1 EMITTER Device Package Shipping† ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3000/Tape & Reel 2SC2712GT1G SC−59 (Pb−Free) |
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