7WBD383CMX1TCG datasheet(4/14 Pages) ONSEMI

Teilenummer	7WBD383CMX1TCG

Bauteilbeschribung	Translating Bus Exchange Switch

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Hersteller	ONSEMI [ON Semiconductor]

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7WBD383

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DC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Conditions

VCC

(V)

TA = 255C

TA =

−555C to +1255C

Unit

Min

Typ

Max

Min

Max

VIK

Clamp Diode Voltage

II/O = −18 mA

4.5

−1.2

V

VIH

High−Level Input Voltage

(Control)

4.0 to

5.5

2.0

V

VIL

Low−Level Input Voltage

(Control)

4.0 to

5.5

0.8

V

VOH

Output Voltage High

See Figure 5

IIN

Input Leakage Current

0 v VIN v 5.5 V

5.5

±0.1

±1.0

mA

IOFF

Power Off Leakage Current

VI/O = 0 to 5.5 V

0

±0.1

±1.0

mA

ICC

Quiescent Supply Current

IO = 0,

VIN = VCC or 0 V

OE = GND

OE = VCC

5.5

±1.0

±0.1

±1.0

mA

DICC

Increase in Supply Current

(Control Pin)

One input at 3.4 V;

Other inputs at VCC

or GND

5.5

2.5

mA

RON

Switch ON Resistance

VI/O = 0,

II/O = 64 mA

II/O = 30 mA

4.5

3

7

W

VI/O = 2.4,

II/O = 15 mA

15

50

VI/O = 2.4,

II/O = 15 mA

4.0

50

70

AC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Test Condition

VCC

(V)

TA = 25 5C

TA =

−555C to +1255C

Unit

Min

Typ

Max

Min

Max

tPD

Propagation Delay, Bus to Bus

See Figure 6

4.0 to

5.5

0.25

ns

tPD−EX

Propagation Delay, EX to Bus

See Figure 6 and

Figure 7

4.0 to

5.5

4.5

ns

tEN

Output Enable Time

See Figure 6

4.5 to

5.5

0.8

2.5

4.2

0.8

4.2

ns

4.0

0.8

3.0

4.6

0.8

4.6

tDIS

Output Disable Time

4.5 to

5.5

0.8

3.0

4.8

0.8

4.8

ns

4.0

0.8

2.9

4.4

0.8

4.4

CIN

Control Input Capacitance

VIN = 5 or 0 V

5.0

2.5

pF

CIO(ON)

Switch On Capacitance

Switch ON

5.0

10

pF

CIO(OFF)

Switch Off Capacitance

Switch OFF

5.0

5

pF

Ähnliche Beschreibung - 7WBD383CMX1TCG

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