Datenblatt-Suchmaschine für elektronische Bauteile |
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MJE3439 Datenblatt(PDF) 1 Page - ON Semiconductor |
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MJE3439 Datenblatt(HTML) 1 Page - ON Semiconductor |
1 / 4 page © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 11 1 Publication Order Number: MJE3439/D MJE3439 NPN Silicon High−Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. Features • High DC Current Gain − hFE = 40−160 @ IC = 20 mAdc • Current Gain Bandwidth Product − fT = 15 MHz (Min) @ IC = 10 mAdc • Low Output Capacitance − Cob = 10 pF (Max) @ f = 1.0 MHz • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 350 Vdc Collector−Base Voltage VCB 450 Vdc Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous IC 0.3 Adc Base Current IB 150 mAdc Total Power Dissipation @ TC = 25_C Derate above 25 _C PD 15 0.12 W mW/ _C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 8.33 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Device Package Shipping ORDERING INFORMATION MJE3439 TO−225 500 Units/Box 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS, 15 WATTS http://onsemi.com MJE3439G TO−225 (Pb−Free) 500 Units/Box TO−225 CASE 77 STYLE 1 2 1 3 MARKING DIAGRAM YWW E3439G Y = Year WW = Work Week E3439 = Device Code G = Pb−Free Package |
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