Datenblatt-Suchmaschine für elektronische Bauteile |
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N01L83W2AN5I Datenblatt(PDF) 4 Page - ON Semiconductor |
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N01L83W2AN5I Datenblatt(HTML) 4 Page - ON Semiconductor |
4 / 10 page Rev. 10 | Page 4 of 10 | www.onsemi.com N01L83W2A Power Savings with Page Mode Operation (WE = VIH) Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power saving feature. The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open and 8-bit words of data are read from the open page. By treating addresses A0-A3 as the least significant bits and addressing the 16 words within the open page, power is reduced to the page mode value which is considerably lower than standard operating currents for low power SRAMs. Page Address (A4 - A16) OE CE1 CE2 Word Address (A0 - A3) Open page Word 1 Word 2 Word 16 ... |
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