Datenblatt-Suchmaschine für elektronische Bauteile |
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BYM26E Datenblatt(PDF) 1 Page - Gulf Semiconductor |
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BYM26E Datenblatt(HTML) 1 Page - Gulf Semiconductor |
1 / 2 page BYM26E SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 1000V CURRENT: 2.3A FEATURE SOD-64 Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability MECHANICAL DATA Case: SOD-64 sintered glass case Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Polarity: color band denotes cathode end Mounting position: any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25 °C, unless otherwise stated) SYMBOL BYM26E units Maximum Recurrent Peak Reverse Voltage VRRM 1000 V Maximum RMS Voltage VRMS 700 V Maximum DC blocking Voltage VDC 1000 V Reverse Breakdown Voltage at IR = 0.1mA V(BR)R 1100min V Maximum Average Forward Rectified Current and Ttp=55 °C; lead length=10mm IFAV 2.3 A Peak Forward Surge Current at t=10ms half sine wave IFSM 45 A Maximum Forward Voltage at Rated Forward Current and 25 °C IF = 2.0A VF 2.65 V Maximum DC Reverse Current Ta = 25 °C at rated DC blocking voltage Ta = 150 °C IR 10 150 µA µA Maximum Reverse Recovery Time (Note 1) Trr 75 nS Non Repetitive Reverse Avalanche Energy ER 10 mJ Diode Capacitance at f=1MHz,VR=0V Cd 75 pF Typical Thermal Resistance (Note 2) Rth(ja) 75 K/W Storage and Operating Junction Temperature Tstg, Tj -65 to +175 ℃ Note: 1. Reverse Recovery Condition IF = 0.5A, IR = 1.0A, IRR = 0.25A 2. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick; thickness of Cu-layer≥40μm Rev.A1 www.gulfsemi.com |
Ähnliche Teilenummer - BYM26E |
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Ähnliche Beschreibung - BYM26E |
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