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TLP351 Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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TLP351 Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 9 page TLP351 2010-06-17 3 Electrical Characteristics (Ta = −40 to 100°C, unless otherwise specified) Characteristics Symbol Test Circuit Test Condition Min Typ.* Max Unit Forward voltage VF ⎯ IF = 5 mA, Ta = 25°C ⎯ 1.55 1.70 V Temperature coefficient of forward voltage ∆VF/∆Ta ⎯ IF = 5 mA ⎯ −2.0 ⎯ mV/°C Input reverse current IR ⎯ VR = 5 V, Ta = 25°C ⎯ ⎯ 10 μA Input capacitance CT ⎯ V = 0 , f = 1 MHz,Ta = 25°C ⎯ 45 ⎯ pF IOPH1 V8-6 = 4 V ⎯ −0.4 −0.2 “H” Level IOPH2 1 VCC = 15 V IF = 5 mA V8-6 = 10 V ⎯ −0.67 −0.4 IOPL1 V6-5 = 2 V 0.2 0.35 ⎯ Output current (Note 8) “L” Level IOPL2 2 VCC = 15 V IF = 0 mA V6-5 = 10 V 0.4 0.63 ⎯ A “H” Level VOH 3 IO = −100 mA, IF = 5 mA 6.0 8.5 ⎯ Output voltage “L” Level VOL 4 VCC = 10 V IO = 100 mA, VF = 0.8 V ⎯ 0.4 1.0 V “H” Level ICCH 5 IF = 10 mA ⎯ 1.4 2.0 Supply current “L” Level ICCL 6 VCC = 10 to 30 V VO open IF = 0 mA ⎯ 1.3 2.0 mA Threshold input current L → H IFLH ⎯ VCC = 15 V, VO > 1 V ⎯ 2.5 5 mA Threshold input voltage H → L VFHL ⎯ VCC = 15 V, VO < 1 V 0.8 ⎯ ⎯ V Supply voltage VCC ⎯ ⎯ 10 ⎯ 30 V *: All typical values are at Ta = 25°C Note 8: Duration of IO time ≤ 50 μs Note 9: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest power consumption design. General precaution to static electricity (ESD) is necessary for handling this component. Isolation Characteristics (Ta = 25°C) Characteristic Symbol Test Conditions Min. Typ. Max. Unit Capacitance input to output CS V = 0,f = 1MHz (Note5) ⎯ 1.0 ⎯ pF Isolation resistance RS VS = 500 V, Ta = 25°C, R.H. ≤ 60% (Note5) 1×10 12 10 14 ― Ω AC,1 minute 3750 ― ― AC,1 second,in oil ― 10000 ― Vrms Isolation voltage BVS DC,1 minute,in oil ― 10000 ― Vdc |
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