Datenblatt-Suchmaschine für elektronische Bauteile |
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KM684000ALGI-7L Datenblatt(PDF) 5 Page - Samsung semiconductor |
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KM684000ALGI-7L Datenblatt(HTML) 5 Page - Samsung semiconductor |
5 / 10 page CMOS SRAM K6T1008C2E Family Revision 3.0 March 2000 5 AC CHARACTERISTICS (VCC=4.5~5.5V, Commercial Product: TA=0 to 70 °C, Industrial Product: TA=-40 to 85°C) Parameter List Symbol Speed Bins Units 55ns 70ns Min Max Min Max Read Read Cycle Time tRC 55 - 70 - ns Address Access Time tAA - 55 - 70 ns Chip Select to Output tCO - 55 - 70 ns Output Enable to Valid Output tOE - 25 - 35 ns Chip Select to Low-Z Output tLZ 10 - 10 - ns Output Enable to Low-Z Output tOLZ 5 - 5 - ns Chip Disable to High-Z Output tHZ 0 20 0 25 ns Output Disable to High-Z Output tOHZ 0 20 0 25 ns Output Hold from Address Change tOH 10 - 10 - ns Write Write Cycle Time tWC 55 - 70 - ns Chip Select to End of Write tCW 45 - 60 - ns Address Set-up Time tAS 0 - 0 - ns Address Valid to End of Write tAW 45 - 60 - ns Write Pulse Width tWP 40 - 50 - ns Write Recovery Time tWR 0 - 0 - ns Write to Output High-Z tWHZ 0 20 0 25 ns Data to Write Time Overlap tDW 20 - 25 - ns Data Hold from Write Time tDH 0 - 0 - ns End Write to Output Low-Z tOW 5 - 5 - ns CL1) 1. Including scope and jig capacitance AC OPERATING CONDITIONS TEST CONDITIONS( Test Load and Input/Output Reference) Input pulse level: 0.8 to 2.4V Input rising and falling time: 5ns Input and output reference voltage:1.5V Output load(see right): CL=100pF+1TTL CL=50pF+1TTL DATA RETENTION CHARACTERISTICS 1. CS1 ≥Vcc-0.2V, CS2≥Vcc-0.2V(CS1 controlled) or CS2≤0.2V(CS2 controlled) Item Symbol Test Condition Min Typ Max Unit Vcc for data retention VDR CS1 ≥Vcc-0.2V1) 2.0 - 5.5 V Data retention current IDR Vcc=3.0V, CS1 ≥Vcc-0.2V1) K6T1008C2E-L - - 20 µA K6T1008C2E-B - - 10 K6T1008C2E-P - - 25 K6T1008C2F-F - - 10 Data retention set-up time tSDR See data retention waveform 0 - - ms Recovery time tRDR 5 - - |
Ähnliche Teilenummer - KM684000ALGI-7L |
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Ähnliche Beschreibung - KM684000ALGI-7L |
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