KM44C4103C datasheet(4/20 Pages) SAMSUNG

Teilenummer	KM44C4103C

Bauteilbeschribung	4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode

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Hersteller	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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CMOS DRAM

KM44C4003C, KM44C4103C

*Note :

ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1, ICC3 and ICC6 address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one fast page mode cycle time, tPC.

DC AND OPERATING CHARACTERISTICS (Continued)

ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.)

ICC2 : Standby Current (RAS=CAS=W=VIH)

ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.)

ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)

ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)

ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min.)

ICC7 : Battery back-up current, Average power supply current, Battery back-up mode

Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V,

DQ=Don

′t care, TRC=31.25us(4K/L-ver), 62.5us(2K/L-ver), TRAS=TRASmin~300ns

ICCS : Self Refresh Current

RAS=CAS=0.2V, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,

DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open

Symbol

Power

Speed

Max

Units

KM44C4003C

KM44C4103C

ICC1

Don

′t care

-5

-6

90

80

110

100

mA

ICC2

Normal

L

Don

′t care

2

1

2

1

mA

ICC3

Don

′t care

-5

-6

90

80

110

100

mA

ICC4

Don

′t care

-5

-6

80

70

90

80

mA

ICC5

Normal

L

Don

′t care

1

250

1

250

mA

uA

ICC6

Don

′t care

-5

-6

90

80

110

100

mA

ICC7

L

Don

′t care

300

uA

ICCS

L

Don

′t care

250

uA

Ähnliche Beschreibung - KM44C4103C

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KM44C4103C Datenblatt(PDF) 4 Page - Samsung semiconductor

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Ähnliche Teilenummer - KM44C4103C

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