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KM68257E-12 Datenblatt(PDF) 5 Page - Samsung semiconductor

Teilenummer KM68257E-12
Bauteilbeschribung  32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges.
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Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM68257E-12 Datenblatt(HTML) 5 Page - Samsung semiconductor

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KM68257E, KM68257EI
CMOS SRAM
PRELIMINARY
Revision 0.0
- 5 -
August 1998
WRITE CYCLE
NOTE : The above parameters are also guaranteed at industrial temperature range
.
Parameter
Symbol
KM68257E-10
KM68257E-12
KM68257E-15
Unit
Min
Max
Min
Max
Min
Max
Write Cycle Time
tWC
10
-
12
-
15
-
ns
Chip Select to End of Write
tCW
8
-
9
-
10
-
ns
Address Setup Time
tAS
0
-
0
-
0
-
ns
Address Valid to End of Write
tAW
8
-
9
-
10
-
ns
Write Pulse Width(OE High)
tWP
8
-
9
-
10
-
ns
Write Pulse Width(OE Low)
tWP1
10
-
12
-
15
-
ns
Write Recovery Time
tWR
0
-
0
-
0
-
ns
Write to Output High-Z
tWHZ
0
5
0
6
0
7
ns
Data to Write Time Overlap
tDW
5
-
6
-
7
-
ns
Data Hold from Write Time
tDH
0
-
0
-
0
-
ns
End Write to Output Low-Z
tOW
0
-
0
-
0
-
ns
Address
Data Out
Previous Valid Data
Valid Data
TIMMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tAA
tRC
tOH
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
CS
Address
OE
Data out
tAA
tOLZ
tLZ(4,5)
tOH
tOHZ
tRC
tOE
tCO
tPU
tPD
Valid Data
tHZ(3,4,5)
50%
50%
VCC
Current
ICC
ISB


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