Datenblatt-Suchmaschine für elektronische Bauteile |
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KM684000BLP-7 Datenblatt(PDF) 6 Page - Samsung semiconductor |
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KM684000BLP-7 Datenblatt(HTML) 6 Page - Samsung semiconductor |
6 / 9 page KM684000B Family CMOS SRAM Revision 3.0 September 1998 6 Address Data Out Previous Data Valid Data Valid TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH) tAA tRC tOH TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) Data Valid High-Z CS Address OE Data out NOTES (READ CYCLE) 1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device interconnection. tOH tAA tOLZ tLZ tOHZ tHZ tRC tOE tCO1 |
Ähnliche Teilenummer - KM684000BLP-7 |
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Ähnliche Beschreibung - KM684000BLP-7 |
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