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SI-8090E Datenblatt(PDF) 3 Page - Sanken electric

Teilenummer SI-8090E
Bauteilbeschribung  Full-Mold, Separate Excitation Switching Type
Download  4 Pages
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Hersteller  SANKEN [Sanken electric]
Direct Link  http://www.sanken-ele.co.jp/en
Logo SANKEN - Sanken electric

SI-8090E Datenblatt(HTML) 3 Page - Sanken electric

  SI-8090E Datasheet HTML 1Page - Sanken electric SI-8090E Datasheet HTML 2Page - Sanken electric SI-8090E Datasheet HTML 3Page - Sanken electric SI-8090E Datasheet HTML 4Page - Sanken electric  
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background image
78
sBlock Diagram
sStandard External Circuit
sTa-PD Characteristics
SWOUT
VOS
VIN
3
GND
5
N.C
4
2
1
OSC
Reg.
OCP
Comp.
Reset
Drive
TSD
Amp.
VREF
VIN
C1
D1
L1
5V : 200
µH
9V,12V: 300
µH
100
µF
VIN
VO
AK06
GND
NC
GND
GND
SI-8000E
SWOUT
VOS
1
2
3
+
C2
330
µF
+
5
4
(Sanken)
15
10
5
0
–30
025
50
Ambient Operating Temperature Ta (
°C)
75
100
125
100
×100
×2mm
(5.2
°C/W)
75×
75×
2mm
(7.6
°C/W)
Infinite heatsink
Without heatsink
With Silicon Grease
Heatsink: Aluminum
qSI-8000E Series
sSelecting External Components
1. Inductor L1
1) It must be suited for switching regulators.
Do not use inductors as noise filters as they generate excessive heat.
2) It must have the appropriate inductance value.
If the inductance is too small (150
µH or lower), abnormal oscillation may occur causing operation problems in the overcurrent protection
circuit within the rated current range.
3) The rated current must be satisfied.
If the rated current is exceeded, magnetic saturation leads to overcurrent.
2. Capacitors C1 and C2
1) They must satisfy the withstand voltage and allowable ripple current.
Exceeding the ratings of these capacitors or using them without derating shortens their service lives and may also cause abnormal
oscillation of the IC.
2) C2 must be a low-impedance type capacitor.
A low-impedance type capacitor is recommended for C2 to ensure minimum ripple voltage and stable switching operation.
3. Diode D1
The Sanken AK06 diode is recommended for D1. If you intended to use an equivalent diode, be sure to use a Schottky Barrier diode and make
sure that the reverse voltage applied to terminal 2 of the IC does not exceed the value (–1V) given in the absolute maximum ratings. If you use
a fast recovery diode or any other diode, application of a reverse voltage generated from the recovery or ON voltage of the diode may damage
the IC.
Application
Variable output voltage
Output voltage can be adjusted in the same way as SI-8000S in page 85.
The efficiency depends on the input voltage and the out-
put current. Thus, obtain the value from the efficiency
graph on page 79 and substitute the percentage in the
formula above.
VO : Output voltage
VIN : Input voltage
IO : Output current
ηx : Efficiency (%)
VF : Diode forward voltage
0.4V(AK06)
Thermal design for D1 must be considered separately.
PD=VO•IO
100
–1
–VF•IO 1–
VO
ηχ
VIN


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