Datenblatt-Suchmaschine für elektronische Bauteile |
|
STD27GK08 Datenblatt(PDF) 3 Page - Sirectifier Global Corp. |
|
STD27GK08 Datenblatt(HTML) 3 Page - Sirectifier Global Corp. |
3 / 4 page STD/SDT27 Thyristor-Diode Modules, Diode-Thyristor Modules Fig. 1 Surge overload current I TSM, IFSM: Crest value, t: duration Fig. 2 i2dt versus time (1-10 ms) Fig. 2a Maximum forward current at case temperature Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 100 101 102 103 104 0.1 1 10 I G V G mA 1: I GT, TVJ = 125 C 2: I GT, TVJ = 25 C 3: I GT, TVJ = -40 C V 4: P GAV = 0.5 W 5: P GM = 5 W 6: P GM = 10 W I GD, TVJ = 125 C 3 4 2 1 5 6 Fig. 4 Gate trigger characteristics 10 100 1000 1 10 100 1000 mA I G s t gd Limit typ. T VJ = 25 C Fig. 6 Gate trigger delay time 3 x STD/SDT27 |
Ähnliche Teilenummer - STD27GK08 |
|
Ähnliche Beschreibung - STD27GK08 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |